FDP22N50N

FDP22N50, FDP22N50N

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Description

Parameters

ParameterFDP22N50N
IC package
Package
TO-220-3 (Straight Leads)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<312.5 W
Input capacitance of field effect transistor
Ciss
3.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<22 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<220 mΩId, Vgs = 11A, 10V
MOSFET series
Series
UniFET™
Gate charge
QG
65 nCVgs = 10V
FET Feature
FET Feature
Standard