FDP18N20F

FDP18N20, FDP18N20F

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Description

Parameters

ParameterFDP18N20F
IC package
Package
TO-220-3 (Straight Leads)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<100 W
Input capacitance of field effect transistor
Ciss
1.18 nFVds = 25V
Continuous voltage between drain and source
UDSS
<200 V
Continuous drain current
IDSS
<18 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<145 mΩId, Vgs = 9A, 10V
MOSFET series
Series
UniFET™
Gate charge
QG
26 nCVgs = 10V
FET Feature
FET Feature
Standard