FDL100N50

FDL100N50, FDL100N50F

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Description

Parameters

ParameterFDL100N50F
IC package
Package
TO-264
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<2.5 kW
Input capacitance of field effect transistor
Ciss
12 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<100 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<55 mΩId, Vgs = 50A, 10V
MOSFET series
Series
UniFET™
Gate charge
QG
238 nCVgs = 10V
FET Feature
FET Feature
Standard