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| Parameter | FDFMA3N109 | |
|---|---|---|
IC package | Package | 6-MLP, 6-MicroFET™ |
Manufacturer | Manufacturer | Fairchild Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <650 mW |
Input capacitance of field effect transistor | Ciss | 220 pFVds = 15V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <2.9 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <123 mΩId, Vgs = 2.9A, 4.5V |
MOSFET series | Series | PowerTrench® |
Gate charge | QG | 3 nCVgs = 4.5V |
FET Feature | FET Feature | Diode (Isolated) |