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| Parameter | FDFMA2P859T | |
|---|---|---|
IC package | Package | 6-MLP, 6-MicroFET™ |
Manufacturer | Manufacturer | Fairchild Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <700 mW |
Input capacitance of field effect transistor | Ciss | 435 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <3 A |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <120 mΩId, Vgs = 3A, 4.5V |
MOSFET series | Series | PowerTrench® |
Gate charge | QG | 6 nCVgs = 4.5V |
FET Feature | FET Feature | Diode (Isolated) |