FDD6N50FTF

FDD6N50, FDD6N50FTF, FDD6N50FTM, FDD6N50TF, FDD6N50TM, FDD6N50TM_F085, FDD6N50TM_WS

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Description

Parameters

ParameterFDD6N50FTFFDD6N50FTMFDD6N50TFFDD6N50TMFDD6N50TM_F085FDD6N50TM_WS
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<89 W
Input capacitance of field effect transistor
Ciss
960 pFVds = 25V960 pFVds = 25V940 pFVds = 25V940 pFVds = 25V940 pFVds = 25V940 pFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<5.5 A<5.5 A<6 A<6 A<6 A<6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.15 ΩId, Vgs = 2.75A, 10V<1.15 ΩId, Vgs = 2.75A, 10V<900 mΩId, Vgs = 3A, 10V<900 mΩId, Vgs = 3A, 10V<900 mΩId, Vgs = 3A, 10V<900 mΩId, Vgs = 3A, 10V
MOSFET series
Series
UniFET™
Gate charge
QG
19.8 nCVgs = 10V19.8 nCVgs = 10V16.6 nCVgs = 10V16.6 nCVgs = 10V16.6 nCVgs = 10V16.6 nCVgs = 10V
FET Feature
FET Feature
Standard