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| Parameter | FDD6N20TF | FDD6N20TM | |
|---|---|---|---|
IC package | Package | DPak, TO-252 (2 leads+tab), SC-63 | |
Manufacturer | Manufacturer | Fairchild Semiconductor | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <40 W | |
Input capacitance of field effect transistor | Ciss | 230 pFVds = 25V | |
Continuous voltage between drain and source | UDSS | <200 V | |
Continuous drain current | IDSS | <4.5 A | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <800 mΩId, Vgs = 2.3A, 10V | |
MOSFET series | Series | UniFET™ | |
Gate charge | QG | 6.1 nCVgs = 10V | |
FET Feature | FET Feature | Standard | |