FDD5N50

FDD5N50, FDD5N50FTF_WS, FDD5N50FTM_WS, FDD5N50TF_WS, FDD5N50TM_WS, FDD5N50UTF_WS, FDD5N50UTM_WS

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Description

Parameters

Parameter		FDD5N50FTF_WS	FDD5N50FTM_WS	FDD5N50TF_WS	FDD5N50TM_WS	FDD5N50UTF_WS	FDD5N50UTM_WS
IC package	Package	DPak, TO-252 (2 leads+tab), SC-63
Manufacturer	Manufacturer	Fairchild Semiconductor
Type of mounting a component on a board/circuit	Mount	Surface mount
Power dissipation	P	<40 W
Input capacitance of field effect transistor	C_iss	650 pFVds = 25V	650 pFVds = 25V	640 pFVds = 25V	640 pFVds = 25V	650 pFVds = 25V	650 pFVds = 25V
Continuous voltage between drain and source	U_DSS	<500 V
Continuous drain current	I_DSS	<3.5 A	<3.5 A	<4 A	<4 A	<3 A	<3 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<1.55 ΩId, Vgs = 1.75A, 10V	<1.55 ΩId, Vgs = 1.75A, 10V	<1.4 ΩId, Vgs = 2A, 10V	<1.4 ΩId, Vgs = 2A, 10V	<2 ΩId, Vgs = 1.5A, 10V	<2 ΩId, Vgs = 1.5A, 10V
MOSFET series	Series	UniFET™	UniFET™	UniFET™	UniFET™	UltraFRFET™	UltraFRFET™
Gate charge	Q_G	15 nCVgs = 10V
FET Feature	FET Feature	Standard