FDD5614

FDD5614, FDD5614P

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Description

Parameters

ParameterFDD5614P
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.6 W
Input capacitance of field effect transistor
Ciss
759 pFVds = 30V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<15 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<100 mΩId, Vgs = 4.5A, 10V
MOSFET series
Series
PowerTrench®
Gate charge
QG
24 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate