FDD306

FDD306, FDD306P

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Description

Parameters

ParameterFDD306P
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.6 W
Input capacitance of field effect transistor
Ciss
1.29 nFVds = 6V
Continuous voltage between drain and source
UDSS
<12 V
Continuous drain current
IDSS
<6.7 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<28 mΩId, Vgs = 6.7A, 4.5V
MOSFET series
Series
PowerTrench®
Gate charge
QG
21 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate