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| Parameter | FDC855N | |
|---|---|---|
IC package | Package | 6-SSOT, SuperSOT-6 |
Manufacturer | Manufacturer | Fairchild Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <800 mW |
Input capacitance of field effect transistor | Ciss | 655 pFVds = 15V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <6.1 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <27 mΩId, Vgs = 6.1A, 10V |
MOSFET series | Series | PowerTrench® |
Gate charge | QG | 13 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate |