FDC645N

FDC645, FDC645N, FDC645N_F095

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Description

Parameters

ParameterFDC645NFDC645N_F095
IC package
Package
6-SSOT, SuperSOT-6
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<800 mW
Input capacitance of field effect transistor
Ciss
1.46 nFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<5.5 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<26 mΩId, Vgs = 6.2A, 10V
MOSFET series
Series
PowerTrench®
Gate charge
QG
21 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate