FDC637

FDC637, FDC637AN, FDC637BNZ

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Description

Parameters

ParameterFDC637ANFDC637BNZ
IC package
Package
6-SSOT, SuperSOT-6
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<800 mW
Input capacitance of field effect transistor
Ciss
1.125 nFVds = 10V895 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<6.2 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<24 mΩId, Vgs = 6.2A, 4.5V
MOSFET series
Series
PowerTrench®
Gate charge
QG
16 nCVgs = 4.5V12 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate