FDB8444_F085

FDB8444, FDB8444_F085, FDB8444TS

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterFDB8444_F085FDB8444TS
IC package
Package
D²Pak, TO-263 (2 leads + tab), D²Pak, TO-263 (2 leads + tab)D²Pak, TO-263 (2 leads + tab), D²Pak, TO-263 (4 leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<167 W<181 W
Input capacitance of field effect transistor
Ciss
8.035 nFVds = 25V8.41 nFVds = 25V
Continuous voltage between drain and source
UDSS
<40 V
Continuous drain current
IDSS
<70 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<5.5 mΩId, Vgs = 70A, 10V<5 mΩId, Vgs = 70A, 10V
MOSFET series
Series
PowerTrench®
Gate charge
QG
128 nCVgs = 10V338 nCVgs = 20V
FET Feature
FET Feature
Logic Level Gate