FDB15N50

FDB15N50

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Description

Parameters

ParameterFDB15N50
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<300 W
Input capacitance of field effect transistor
Ciss
1.85 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<15 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<380 mΩId, Vgs = 7.5A, 10V
Gate charge
QG
41 nCVgs = 10V
FET Feature
FET Feature
Standard