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| Parameter | FDB12N50FTM_WS | FDB12N50TM | FDB12N50UTM_WS | |
|---|---|---|---|---|
IC package | Package | D²Pak, TO-263 (2 leads + tab) | ||
Manufacturer | Manufacturer | Fairchild Semiconductor | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <165 W | ||
Input capacitance of field effect transistor | Ciss | 1.395 nFVds = 25V | 1.315 nFVds = 25V | 1.395 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <500 V | ||
Continuous drain current | IDSS | <11.5 A | <11.5 A | <10 A |
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <700 mΩId, Vgs = 6A, 10V | <650 mΩId, Vgs = 6A, 10V | <800 mΩId, Vgs = 5A, 10V |
MOSFET series | Series | UniFET™ | UniFET™ | UltraFRFET™ |
Gate charge | QG | 30 nCVgs = 10V | ||
FET Feature | FET Feature | Standard | ||