FDA20N50

FDA20N50, FDA20N50F, FDA20N50_F109

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Description

Parameters

ParameterFDA20N50FFDA20N50_F109
IC package
Package
TO-3P-3 (Straight Leads), TO-3PN-3TO-3P-3 (Straight Leads), TO-3P
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<388 W<280 W
Input capacitance of field effect transistor
Ciss
3.39 nFVds = 25V3.12 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<22 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<260 mΩId, Vgs = 11A, 10V<230 mΩId, Vgs = 11A, 10V
MOSFET series
Series
UniFET™
Gate charge
QG
65 nCVgs = 10V59.5 nCVgs = 10V
FET Feature
FET Feature
Standard