FCPF9N60

FCPF9N60, FCPF9N60NT

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Description

Parameters

ParameterFCPF9N60NT
IC package
Package
TO-220F
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<29.8 W
Input capacitance of field effect transistor
Ciss
1.24 nFVds = 100V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<9 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<385 mΩId, Vgs = 4.5A, 10V
MOSFET series
Series
SuperMOS™
Gate charge
QG
29 nCVgs = 10V
FET Feature
FET Feature
Standard