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| Parameter | FCP9N60N | |
|---|---|---|
IC package | Package | TO-220-3 |
Manufacturer | Manufacturer | Fairchild Semiconductor |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <88.3 W |
Input capacitance of field effect transistor | Ciss | 1.24 nFVds = 100V |
Continuous voltage between drain and source | UDSS | <600 V |
Continuous drain current | IDSS | <9 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <385 mΩId, Vgs = 4.5A, 10V |
MOSFET series | Series | SuperMOS™ |
Gate charge | QG | 29 nCVgs = 10V |
FET Feature | FET Feature | Standard |