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| Parameter | FCD4N60TF | FCD4N60TM | FCD4N60TM_WS | |
|---|---|---|---|---|
IC package | Package | DPak, TO-252 (2 leads+tab), SC-63 | ||
Manufacturer | Manufacturer | Fairchild Semiconductor | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <50 W | ||
Input capacitance of field effect transistor | Ciss | 540 pFVds = 25V | ||
Continuous voltage between drain and source | UDSS | <600 V | ||
Continuous drain current | IDSS | <3.9 A | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <1.2 ΩId, Vgs = 2A, 10V | ||
MOSFET series | Series | SuperFET™ | ||
Gate charge | QG | 16.6 nCVgs = 10V | ||
FET Feature | FET Feature | Standard | ||