FCB11N60FTM

FCB11N60, FCB11N60FTM, FCB11N60TM

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Description

Parameters

ParameterFCB11N60FTMFCB11N60TM
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<125 W
Input capacitance of field effect transistor
Ciss
1.49 nFVds = 25V
Continuous voltage between drain and source
UDSS
<600 V
Continuous drain current
IDSS
<11 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<380 mΩId, Vgs = 5.5A, 10V
MOSFET series
Series
SuperFET™
Gate charge
QG
52 nCVgs = 10V
FET Feature
FET Feature
Standard