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| Parameter | FB180SA10 | |
|---|---|---|
IC package | Package | SOT-227 |
Manufacturer | Manufacturer | Vishay/Semiconductors |
Type of mounting a component on a board/circuit | Mount | On chassis/wire |
Power dissipation | P | <480 W |
Input capacitance of field effect transistor | Ciss | 10.7 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <100 V |
Continuous drain current | IDSS | <180 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <6.5 mΩId, Vgs = 108A, 10V |
MOSFET series | Series | HEXFET® |
Gate charge | QG | 380 nCVgs = 10V |
FET Feature | FET Feature | Standard |