DMN3200U-7

DMN3200, DMN3200U-7

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Description

Parameters

ParameterDMN3200U-7
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
Diodes Inc
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<650 mW
Input capacitance of field effect transistor
Ciss
290 pFVds = 10V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<2.2 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<90 mΩId, Vgs = 2.2A, 4.5V
FET Feature
FET Feature
Logic Level Gate