CSD25401Q3

CSD25401, CSD25401Q3

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Description

Parameters

ParameterCSD25401Q3
IC package
Package
8-QFN
Manufacturer
Manufacturer
Texas Instruments
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2.8 W
Input capacitance of field effect transistor
Ciss
1.4 nFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<13.6 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<11.5 mΩId, Vgs = 10A, 4.5V
MOSFET series
Series
NexFET™
Gate charge
QG
12.3 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate