CSD25302Q2

CSD25302, CSD25302Q2

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Description

Parameters

ParameterCSD25302Q2
Manufacturer
Manufacturer
Texas Instruments
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2.4 W
Input capacitance of field effect transistor
Ciss
350 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<5 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<49 mΩId, Vgs = 3A, 4.5V
MOSFET series
Series
NexFET™
Gate charge
QG
3.4 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate