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| Parameter | CSD16325Q5 | |
|---|---|---|
IC package | Package | 8-SON |
Manufacturer | Manufacturer | Texas Instruments |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <3.1 W |
Input capacitance of field effect transistor | Ciss | 4 nFVds = 12.5V |
Continuous voltage between drain and source | UDSS | <25 V |
Continuous drain current | IDSS | <100 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <2 mΩId, Vgs = 30A, 8V |
MOSFET series | Series | NexFET™ |
Gate charge | QG | 25 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |