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| Parameter | BUK7C06-40AITE,118 | BUK7C08-55AITE,118 | BUK7C10-75AITE,118 | BUK7E04-40A,127 | BUK7E07-55B,127 | BUK7E11-55B,127 | BUK7E2R3-40C,127 | BUK7E2R7-30B,127 | BUK7E4R3-75C,127 | BUK7L06-34ARC,127 | BUK7L11-34ARC,127 | BUK7Y13-40B,115 | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IC package | Package | D²Pak, TO-263 (6 leads + tab) | D²Pak, TO-263 (6 leads + tab) | D²Pak, TO-263 (6 leads + tab) | I²Pak, TO-220AB (3 straight leads + tab) | I²Pak, TO-220AB (3 straight leads + tab) | I²Pak, TO-220AB (3 straight leads + tab) | I²Pak, TO-220AB (3 straight leads + tab) | I²Pak, TO-220AB (3 straight leads + tab) | I²Pak, TO-220AB (3 straight leads + tab) | TO-220 | TO-220 | LFPak-4 |
Manufacturer | Manufacturer | NXP Semiconductors | |||||||||||
Type of mounting a component on a board/circuit | Mount | Surface mount | Surface mount | Surface mount | Through-hole | Through-hole | Through-hole | Through-hole | Through-hole | Through-hole | Through-hole | Through-hole | Surface mount |
Power dissipation | P | <272 W | <272 W | <272 W | <300 W | <203 W | <157 W | <333 W | <300 W | <333 W | <250 W | <172 W | <85 W |
Input capacitance of field effect transistor | Ciss | 4.3 nFVds = 25V | 4.2 nFVds = 25V | 4.7 nFVds = 25V | 5.73 nFVds = 25V | 3.76 nFVds = 25V | 2.604 nFVds = 25V | 11.323 nFVds = 25V | 6.212 nFVds = 25V | 11.659 nFVds = 25V | 4.533 nFVds = 25V | 2.506 nFVds = 25V | 1.311 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <40 V | <55 V | <75 V | <40 V | <55 V | <55 V | <40 V | <30 V | <75 V | <34 V | <34 V | <40 V |
Continuous drain current | IDSS | <75 A | <75 A | <75 A | <75 A | <75 A | <75 A | <100 A | <75 A | <100 A | <75 A | <75 A | <58 A |
FET channel type | Channel | N-ch | |||||||||||
Channel resistance at ON state | RDS-ON | <6 mΩId, Vgs = 50A, 10V | <8 mΩId, Vgs = 50A, 10V | <10 mΩId, Vgs = 50A, 10V | <4.5 mΩId, Vgs = 25A, 10V | <7.1 mΩId, Vgs = 25A, 10V | <11 mΩId, Vgs = 25A, 10V | <2.3 mΩId, Vgs = 25A, 10V | <2.7 mΩId, Vgs = 25A, 10V | <4.3 mΩId, Vgs = 25A, 10V | <6 mΩId, Vgs = 30A, 10V | <11 mΩId, Vgs = 30A, 10V | <13 mΩId, Vgs = 25A, 10V |
MOSFET series | Series | (not set) | (not set) | (not set) | TrenchMOS™ | TrenchMOS™ | TrenchMOS™ | TrenchMOS™ | TrenchMOS™ | TrenchMOS™ | TrenchMOS™ | TrenchMOS™ | TrenchMOS™ |
Gate charge | QG | 120 nCVgs = 10V | 116 nCVgs = 10V | 121 nCVgs = 10V | 117 nCVgs = 10V | 53 nCVgs = 10V | 37 nCVgs = 10V | 175 nCVgs = 10V | 91 nCVgs = 10V | 142 nCVgs = 10V | 82 nCVgs = 10V | 53 nCVgs = 10V | 19 nCVgs = 10V |
FET Feature | FET Feature | Current Sensing | Current Sensing | Current Sensing | Standard | Standard | Standard | Standard | Standard | Standard | Standard | Standard | Standard |