BTS113AE3045A

BTS113, BTS113A, BTS113AE3045A, BTS113AE3064

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Description

Parameters

ParameterBTS113ABTS113AE3045ABTS113AE3064
IC package
Package
TO-220AB
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<40 W
Input capacitance of field effect transistor
Ciss
560 pFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<11.5 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<170 mΩId, Vgs = 5.8A, 4.5V
MOSFET series
Series
TEMPFET®
FET Feature
FET Feature
Logic Level Gate