BTS110E3045A

BTS110, BTS110E3045A

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Description

Parameters

ParameterBTS110E3045A
IC package
Package
TO-220
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<40 W
Input capacitance of field effect transistor
Ciss
600 pFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<10 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<200 mΩId, Vgs = 5A, 10V
MOSFET series
Series
TEMPFET®
FET Feature
FET Feature
Standard