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| Parameter | BSZ100N03LSG | BSZ100N03MSG | BSZ100N06LS3G | |
|---|---|---|---|---|
IC package | Package | 8-TSDSON | TDSON-8 | 8-TSDSON |
Manufacturer | Manufacturer | Infineon Technologies | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <30 W | <30 W | <50 W |
Input capacitance of field effect transistor | Ciss | 1.5 nFVds = 15V | 1.7 nFVds = 15V | 3.5 nFVds = 30V |
Continuous voltage between drain and source | UDSS | <30 V | <30 V | <60 V |
Continuous drain current | IDSS | <40 A | <40 A | <20 A |
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <10 mΩId, Vgs = 20A, 10V | <9.1 mΩId, Vgs = 20A, 10V | <10 mΩId, Vgs = 20A, 10V |
MOSFET series | Series | OptiMOS™ | ||
Gate charge | QG | 17 nCVgs = 10V | 23 nCVgs = 10V | 45 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate | ||