BSS87E6327

BSS87, BSS87,115, BSS87E6327, BSS87E6327T, BSS87E6433, BSS87L6327

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Description

Parameters

Parameter		BSS87,115	BSS87E6327	BSS87E6327T	BSS87E6433	BSS87L6327
IC package	Package	SC-62, SOT-89, MPT3 (3 leads + Tab)	SOT-89	SOT-89	SOT-89	SOT-89
Manufacturer	Manufacturer	NXP Semiconductors	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Type of mounting a component on a board/circuit	Mount	Surface mount
Power dissipation	P	<1 W
Input capacitance of field effect transistor	C_iss	120 pFVds = 25V	97 pFVds = 25V	97 pFVds = 25V	97 pFVds = 25V	97 pFVds = 25V
Continuous voltage between drain and source	U_DSS	<200 V	<240 V	<240 V	<240 V	<240 V
Continuous drain current	I_DSS	<400 mA	<260 mA	<260 mA	<260 mA	<260 mA
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<3 ΩId, Vgs = 400mA, 10V	<6 ΩId, Vgs = 260mA, 10V	<6 ΩId, Vgs = 260mA, 10V	<6 ΩId, Vgs = 260mA, 10V	<6 ΩId, Vgs = 260mA, 10V
MOSFET series	Series	TrenchMOS™	SIPMOS®	SIPMOS®	SIPMOS®	SIPMOS®
Gate charge	Q_G	(not set)	5.5 nCVgs = 10V	5.5 nCVgs = 10V	5.5 nCVgs = 10V	5.5 nCVgs = 10V
FET Feature	FET Feature	Standard	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate