BSS670S2LL6327

BSS670, BSS670S2L, BSS670S2LL6327

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Description

Parameters

ParameterBSS670S2LBSS670S2LL6327
IC package
Package
SOT-23
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<360 mW
Input capacitance of field effect transistor
Ciss
75 pFVds = 25V
Continuous voltage between drain and source
UDSS
<55 V
Continuous drain current
IDSS
<540 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<650 mΩId, Vgs = 270mA, 10V
MOSFET series
Series
OptiMOS™
Gate charge
QG
2.26 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate