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| Parameter | BSS192,115 | BSS192,135 | BSS192E6327 | BSS192PE6327 | BSS192PE6327T | BSS192PL6327 | |
|---|---|---|---|---|---|---|---|
IC package | Package | SC-62, SOT-89, MPT3 (3 leads + Tab) | SC-62, SOT-89, MPT3 (3 leads + Tab) | SOT-89 | SOT-89 | SOT-89 | SOT-89 |
Manufacturer | Manufacturer | NXP Semiconductors | NXP Semiconductors | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Type of mounting a component on a board/circuit | Mount | Surface mount | |||||
Power dissipation | P | <1 W | |||||
Input capacitance of field effect transistor | Ciss | 90 pFVds = 25V | 90 pFVds = 25V | 130 pFVds = 25V | 104 pFVds = 25V | 104 pFVds = 25V | 104 pFVds = 25V |
Continuous voltage between drain and source | UDSS | <240 V | <240 V | <240 V | <250 V | <250 V | <250 V |
Continuous drain current | IDSS | <200 mA | <200 mA | <150 mA | <190 mA | <190 mA | <190 mA |
FET channel type | Channel | P-ch | |||||
Channel resistance at ON state | RDS-ON | <12 ΩId, Vgs = 200mA, 10V | <12 ΩId, Vgs = 200mA, 10V | <20 ΩId, Vgs = 150mA, 10V | <12 ΩId, Vgs = 190mA, 10V | <12 ΩId, Vgs = 190mA, 10V | <12 ΩId, Vgs = 190mA, 10V |
MOSFET series | Series | (not set) | (not set) | SIPMOS® | SIPMOS® | SIPMOS® | SIPMOS® |
Gate charge | QG | (not set) | (not set) | (not set) | 6.1 nCVgs = 10V | 6.1 nCVgs = 10V | 6.1 nCVgs = 10V |
FET Feature | FET Feature | Logic Level Gate | |||||