BSS192,135

BSS192, BSS192,115, BSS192,135, BSS192E6327, BSS192PE6327, BSS192PE6327T, BSS192PL6327

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Description

Parameters

ParameterBSS192,115BSS192,135BSS192E6327BSS192PE6327BSS192PE6327TBSS192PL6327
IC package
Package
SC-62, SOT-89, MPT3 (3 leads + Tab)SC-62, SOT-89, MPT3 (3 leads + Tab)SOT-89SOT-89SOT-89SOT-89
Manufacturer
Manufacturer
NXP SemiconductorsNXP SemiconductorsInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1 W
Input capacitance of field effect transistor
Ciss
90 pFVds = 25V90 pFVds = 25V130 pFVds = 25V104 pFVds = 25V104 pFVds = 25V104 pFVds = 25V
Continuous voltage between drain and source
UDSS
<240 V<240 V<240 V<250 V<250 V<250 V
Continuous drain current
IDSS
<200 mA<200 mA<150 mA<190 mA<190 mA<190 mA
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<12 ΩId, Vgs = 200mA, 10V<12 ΩId, Vgs = 200mA, 10V<20 ΩId, Vgs = 150mA, 10V<12 ΩId, Vgs = 190mA, 10V<12 ΩId, Vgs = 190mA, 10V<12 ΩId, Vgs = 190mA, 10V
MOSFET series
Series
(not set)(not set)SIPMOS®SIPMOS®SIPMOS®SIPMOS®
Gate charge
QG
(not set)(not set)(not set)6.1 nCVgs = 10V6.1 nCVgs = 10V6.1 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate