BSP129E6327

BSP129, BSP129E6327, BSP129E6327T, BSP129L6327, BSP129L6906

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Description

Parameters

ParameterBSP129E6327BSP129E6327TBSP129L6327BSP129L6906
IC package
Package
SOT-223 (3 leads + Tab), SC-73, TO-261AA
Manufacturer
Manufacturer
Infineon Technologies
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.8 W
Input capacitance of field effect transistor
Ciss
108 pFVds = 25V
Continuous voltage between drain and source
UDSS
<240 V
Continuous drain current
IDSS
<350 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<6 ΩId, Vgs = 350mA, 10V
MOSFET series
Series
SIPMOS®
Gate charge
QG
5.7 nCVgs = 5V
FET Feature
FET Feature
Depletion Mode