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| Parameter | BSH205,215 | |
|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 |
Manufacturer | Manufacturer | NXP Semiconductors |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <417 mW |
Input capacitance of field effect transistor | Ciss | 200 pFVds = 9.6V |
Continuous voltage between drain and source | UDSS | <12 V |
Continuous drain current | IDSS | <750 mA |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <400 mΩId, Vgs = 430mA, 4.5V |
Gate charge | QG | 3.8 nCVgs = 4.5V |
FET Feature | FET Feature | Logic Level Gate |