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| Parameter | BSH112,235 | |
|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 |
Manufacturer | Manufacturer | NXP Semiconductors |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <830 mW |
Input capacitance of field effect transistor | Ciss | 40 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <60 V |
Continuous drain current | IDSS | <300 mA |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <5 ΩId, Vgs = 500mA, 10V |
MOSFET series | Series | TrenchMOS™ |
FET Feature | FET Feature | Logic Level Gate |