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| Parameter | BSH105,215 | BSH105,235 | |
|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | |
Manufacturer | Manufacturer | NXP Semiconductors | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <417 mW | |
Input capacitance of field effect transistor | Ciss | 152 pFVds = 16V | |
Continuous voltage between drain and source | UDSS | <20 V | |
Continuous drain current | IDSS | <1.05 A | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <200 mΩId, Vgs = 600mA, 4.5V | |
Gate charge | QG | 3.9 nCVgs = 4.5V | |
FET Feature | FET Feature | Logic Level Gate | |