BSH103,215

BSH103, BSH103,215, BSH103,235

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Description

Parameters

ParameterBSH103,215BSH103,235
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
NXP Semiconductors
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<540 mW
Input capacitance of field effect transistor
Ciss
83 pFVds = 24V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<850 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<400 mΩId, Vgs = 500mA, 4.5V
Gate charge
QG
2.1 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate