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| Parameter | BSC123N08NS3G | BSC123N10LSG | |
|---|---|---|---|
IC package | Package | TDSON-8 | |
Manufacturer | Manufacturer | Infineon Technologies | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <66 W | <114 W |
Input capacitance of field effect transistor | Ciss | 1.87 nFVds = 40V | 4.9 nFVds = 50V |
Continuous voltage between drain and source | UDSS | <80 V | <100 V |
Continuous drain current | IDSS | <55 A | <71 A |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <12.3 mΩId, Vgs = 33A, 10V | <12.3 mΩId, Vgs = 50A, 10V |
MOSFET series | Series | OptiMOS™ | |
Gate charge | QG | 25 nCVgs = 10V | 68 nCVgs = 10V |
FET Feature | FET Feature | Standard | Logic Level Gate |