BSC100N03MSG

BSC100, BSC100N03LSG, BSC100N03MSG, BSC100N06LS3G, BSC100N10NSFG

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Description

Parameters

Parameter		BSC100N03LSG	BSC100N03MSG	BSC100N06LS3G	BSC100N10NSFG
IC package	Package	TDSON-8
Manufacturer	Manufacturer	Infineon Technologies
Type of mounting a component on a board/circuit	Mount	Surface mount
Power dissipation	P	<30 W	<30 W	<50 W	<156 W
Input capacitance of field effect transistor	C_iss	1.5 nFVds = 15V	1.7 nFVds = 15V	3.5 nFVds = 30V	2.9 nFVds = 50V
Continuous voltage between drain and source	U_DSS	<30 V	<30 V	<60 V	<100 V
Continuous drain current	I_DSS	<44 A	<44 A	<50 A	<90 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<10 mΩId, Vgs = 30A, 10V	<10 mΩId, Vgs = 30A, 10V	<10 mΩId, Vgs = 50A, 10V	<10 mΩId, Vgs = 25A, 10V
MOSFET series	Series	OptiMOS™
Gate charge	Q_G	17 nCVgs = 10V	23 nCVgs = 10V	45 nCVgs = 10V	44 nCVgs = 10V
FET Feature	FET Feature	Logic Level Gate	Logic Level Gate	Logic Level Gate	Standard