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| Parameter | BSC047N08NS3G | |
|---|---|---|
IC package | Package | TDSON-8 |
Manufacturer | Manufacturer | Infineon Technologies |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <125 W |
Input capacitance of field effect transistor | Ciss | 4.8 nFVds = 40V |
Continuous voltage between drain and source | UDSS | <80 V |
Continuous drain current | IDSS | <100 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <4.7 mΩId, Vgs = 50A, 10V |
MOSFET series | Series | OptiMOS™ |
Gate charge | QG | 69 nCVgs = 10V |
FET Feature | FET Feature | Standard |