BS250FTC

BS250, BS250FTA, BS250FTC, BS250KL-TR1-E3, BS250P, BS250PSTOA, BS250PSTOB, BS250PSTZ

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Description

Parameters

ParameterBS250FTABS250FTCBS250KL-TR1-E3BS250PBS250PSTOABS250PSTOBBS250PSTZ
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3TO-18-3, TO-92-18RMTO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226TO-92-3 (Standard Body), TO-226
Manufacturer
Manufacturer
Diodes/ZetexDiodes/ZetexVishay/SiliconixDiodes/ZetexDiodes/ZetexDiodes/ZetexDiodes/Zetex
Type of mounting a component on a board/circuit
Mount
Surface mountSurface mountThrough-holeThrough-holeThrough-holeThrough-holeThrough-hole
Power dissipation
P
<330 mW<330 mW<800 mW<700 mW<700 mW<700 mW<700 mW
Input capacitance of field effect transistor
Ciss
25 pFVds = 10V25 pFVds = 10V(not set)60 pFVds = 10V60 pFVds = 10V60 pFVds = 10V60 pFVds = 10V
Continuous voltage between drain and source
UDSS
<45 V<45 V<60 V<45 V<45 V<45 V<45 V
Continuous drain current
IDSS
<90 mA<90 mA<270 mA<230 mA<230 mA<230 mA<230 mA
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<14 ΩId, Vgs = 200mA, 10V<14 ΩId, Vgs = 200mA, 10V<6 ΩId, Vgs = 500mA, 10V<14 ΩId, Vgs = 200mA, 10V<14 ΩId, Vgs = 200mA, 10V<14 ΩId, Vgs = 200mA, 10V<14 ΩId, Vgs = 200mA, 10V
MOSFET series
Series
(not set)(not set)TrenchFET®(not set)(not set)(not set)(not set)
Gate charge
QG
(not set)(not set)3 nCVgs = 15V(not set)(not set)(not set)(not set)
FET Feature
FET Feature
Logic Level GateLogic Level GateStandardStandardStandardStandardStandard