BS108

BS108, BS108/01,126, BS108,126, BS108G, BS108ZL1G

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Description

Parameters

Parameter		BS108/01,126	BS108,126	BS108G	BS108ZL1G
IC package	Package	TO-92-3 (Standard Body), TO-226
Manufacturer	Manufacturer	NXP Semiconductors	NXP Semiconductors	ON Semiconductor	ON Semiconductor
Type of mounting a component on a board/circuit	Mount	Through-hole
Power dissipation	P	<1 W	<1 W	<350 mW	<350 mW
Input capacitance of field effect transistor	C_iss	120 pFVds = 25V	120 pFVds = 25V	150 pFVds = 25V	150 pFVds = 25V
Continuous voltage between drain and source	U_DSS	<200 V
Continuous drain current	I_DSS	<300 mA	<300 mA	<250 mA	<250 mA
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<5 ΩId, Vgs = 100mA, 2.8V	<5 ΩId, Vgs = 100mA, 2.8V	<8 ΩId, Vgs = 100mA, 2.8V	<8 ΩId, Vgs = 100mA, 2.8V
FET Feature	FET Feature	Standard	Standard	Logic Level Gate	Logic Level Gate