APTM20DAM10TG

APTM20DAM10, APTM20DAM10TG

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Description

Parameters

ParameterAPTM20DAM10TG
IC package
Package
SP4 Module
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<694 W
Input capacitance of field effect transistor
Ciss
13.7 nFVds = 25V
Continuous voltage between drain and source
UDSS
<200 V
Continuous drain current
IDSS
<175 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<12 mΩId, Vgs = 87.5A, 10V
Gate charge
QG
224 nCVgs = 10V
FET Feature
FET Feature
Standard