APTM120UM95FAG

APTM120UM95, APTM120UM95FAG

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Description

Parameters

ParameterAPTM120UM95FAG
IC package
Package
SP6
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<2.272 kW
Input capacitance of field effect transistor
Ciss
30.9 nFVds = 25V
Continuous drain current
IDSS
<103 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<114 mΩId, Vgs = 51.5A, 10V
Gate charge
QG
1.122 µCVgs = 10V
FET Feature
FET Feature
Standard