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| Parameter | APTM120SK56T1G | |
|---|---|---|
IC package | Package | SP1 Module |
Manufacturer | Manufacturer | Microsemi-PPG |
Type of mounting a component on a board/circuit | Mount | On chassis/wire |
Power dissipation | P | <390 W |
Input capacitance of field effect transistor | Ciss | 7.736 nFVds = 25V |
Continuous drain current | IDSS | <18 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <672 mΩId, Vgs = 14A, 10V |
Gate charge | QG | 300 nCVgs = 10V |
FET Feature | FET Feature | Standard |