APTM120DA29

APTM120DA29, APTM120DA29TG

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Description

Parameters

ParameterAPTM120DA29TG
IC package
Package
SP4 Module
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<780 W
Input capacitance of field effect transistor
Ciss
10.3 nFVds = 25V
Continuous drain current
IDSS
<34 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<348 mΩId, Vgs = 17A, 10V
Gate charge
QG
374 nCVgs = 10V
FET Feature
FET Feature
Standard