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| Parameter | APTM10DAM02G | |
|---|---|---|
IC package | Package | SP6 |
Manufacturer | Manufacturer | Microsemi-PPG |
Type of mounting a component on a board/circuit | Mount | On chassis/wire |
Power dissipation | P | <1.25 kW |
Input capacitance of field effect transistor | Ciss | 40 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <100 V |
Continuous drain current | IDSS | <495 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <2.5 mΩId, Vgs = 200A, 10V |
Gate charge | QG | 1.36 µCVgs = 10V |
FET Feature | FET Feature | Standard |