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| Parameter | APTM100UM65DAG | APTM100UM65SAG | |
|---|---|---|---|
IC package | Package | SP6 | |
Manufacturer | Manufacturer | Microsemi-PPG | |
Type of mounting a component on a board/circuit | Mount | On chassis/wire | |
Power dissipation | P | <3.25 kW | |
Input capacitance of field effect transistor | Ciss | 28.5 nFVds = 25V | |
Continuous drain current | IDSS | <145 A | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <78 mΩId, Vgs = 72.5A, 10V | |
Gate charge | QG | 1.068 µCVgs = 10V | |
FET Feature | FET Feature | Standard | |