APTM100UM60FAG

APTM100UM60, APTM100UM60FAG

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Description

Parameters

ParameterAPTM100UM60FAG
IC package
Package
SP6
Manufacturer
Manufacturer
Microsemi-PPG
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<2.272 kW
Input capacitance of field effect transistor
Ciss
31.1 nFVds = 25V
Continuous drain current
IDSS
<129 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<70 mΩId, Vgs = 64.5A, 10V
Gate charge
QG
1.116 µCVgs = 10V
FET Feature
FET Feature
Standard